Pin Diode Laser Detector

Silicon pin photodiodes are reverse biased pin diodes which detect light and generate current as a result.

Pin diode laser detector.

Silicon is commonly used as an inexpensive detector material in the vis range. It covers the widest spectral range from the vis to the nir. Silicon pin photodiodes are available with a wide variety of active areas to accommodate many varied applications. The p type and n type regions are typically heavily doped because they are used for ohmic contacts.

The high resistive layer of the intrinsic region provides the large electric field between the p and n region. Ldi pinamps provide a low cost high performance miniature optical receiver module which integrates a high speed high responsivity low leakage current ingaas photodiode with a gaas transimpedance amplifier. A further use of the pin diode is as a photo detector photodetector or photo diode where its structure is particularly suited to absorbing light. The pin photodiode structure allows high quantum efficiency and fast response for detection of photons in the 400nm to 1100nm range.

Pin photodiode has an intrinsic very lightly doped semiconductor region sandwiched between a p doped and an n doped region as shown below. Osi laser diode inc. The pin photodiode structure has an intrinsic layer within the depletion region which allows high quantum efficiency and fast response for detection of photons. A pin diode comprises a near intrinsic semiconductor region usually the space charge region sandwiched between a p type diode and an n type substrate.

Silicon pin photodiodes are available with a wide variety of active areas to accommodate many varied applications. Pin photodiodes convert light to current without a bias voltage having to be applied. For higher demands ingaas is used. The pin diode receives its name from the fact that is has three main layers.

The electric field induces because of the movement of the holes and the electrons. Pinamp mini dil optical receiver modules. Silicon pin photodiodes are reverse biased pin diodes which detect light and generate current as a result. Rather than just having a p type and an n type layer the pin diode has three layers.

1310 nm and 1550 nm. The wide intrinsic region is in contrast to an ordinary p n diode the wide intrinsic region makes the pin diode an inferior rectifier one typical. A pin diode is a diode with a wide undoped intrinsic semiconductor region between a p type semiconductor and an n type semiconductor region. However the term is also used for components with inverse conductivity provided that no other non linear effects are utilized in the component.

The most common semiconductor photodetector is the pin photodiode as shown below. The following graph shows the detector response curve for different materials.